IGBTs | HGTG30N60C3D

600V, PT IGBT

Obsolete

Datasheet

Products

Similar Products

Overview

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

  • Other Industrial

  • 63A, 600V, TC = 25°C
  • Typical Fall Time: 230ns @ TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

Tools and Resources

Product services, tools and other useful resources related to HGTG30N60C3D

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTG30N60C3D

Loading...

Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

30

1.5

-

-

-

52

-

-

-

-

-

Yes

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: HGTG30N60C3D

Equivalent to wafer fab process: 2F,3B

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2F,3B

0

552010123

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search