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Wide Bandgap Solutions


Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle. These wide bandgap (WBG) materials will power future applications for high performance in the following areas;

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Wide Bandgap Products


As a leading provider of power management products, ON Semiconductor is developing the full ecosystem of parts to support wide bandgap power designs, including SiC diodes and SiC MOSFETs, GaN HEMTs, SiC and GaN drivers and integrated modules.


Silicon Carbide (SiC) Diodes

The portfolio of Silicon Carbide (SiC) diodes from ON Semiconductor include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher...

Silicon Carbide (SiC) MOSFETs

The portfolio of Silicon Carbide (SiC) MOSFETs from ON Semiconductor are designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity...

SiC Drivers

The portfolio of Gate Drivers from ON Semiconductor includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. ON Semiconductor Gate Drivers provide features and benefits that include High system efficiency high reliability..

GaN Drivers

The ideal performance characteristics provided by the portfolio of Gate Drivers from ON Semiconductor that enable them meet the requirements of specific applications include Automotive Power Supplies, HEV/EV Traction Inverters, EV Chargers, Resonant converters, Half-bridge and full-bridge converters, Active clamp Flyback converters, Totem pole...

Wide Bandgap Products - Advantages


Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle. These wide bandgap (WBG) materials will power future applications for high performance in the following areas;

Highest Reliability:

ON Semiconductor’s SiC devices have a patented termination structure which provides
superior robustness for harsh environmental conditions.

H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960V)

Robustness:

ON Semiconductor Schottky Barrier SiC Diodes always maintain the best in class behavior in regards to leakage.

SiC Diodes Ruggedness – Reverse Leakage

Ruggedness:

SiC Diodes Ruggedness – Surge and Avalanche


Surge current waveform of a 650V/30A ON Semiconductor SiC diode


Avalanche current waveform of a 650V/30A ON Semiconductor SiC diode

  • Tj-max limits the avalanche capability of the device
  • Test to failures were consistent and repeatable indicating stable process


Wide Bandgap Application


Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle. These wide bandgap (WBG) materials will power future applications for high performance in the following areas;

Higher Switching Frequency | Lower Power Loss | Higher Efficiency | Higher Power Density
Less Components | Smaller Size | Lower Weight


Related Information



Reducing Size & Increasing Efficiency with
the Disruptive Technology of Silicon Carbide

Design Supports:

We provide physical spice models that help design engineers to realize their application performance in simulation rather than costly measurements cycles. Our predictive discrete modeling enables system level simulation where parts can be optimized for system level figures of merit, such as efficiency and not just component level figures of merit, such as RDS(on).


Standards:

ON Semiconductor is a member of the JEDEC Wide Bandgap Standards Committee. We are contributing the development of universal standards to help advance the adoption of wide bandgap (WBG) power technologies.

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