ON Semiconductor’s Ultra Field Stop 1200 V IGBTs Wins Top 10 Power Product Award 2016 in China

BEIJING, China – Sept 8, 2016 –


Recognition for devices’ new benchmarks in power efficiency for high power switching systems

BEIJING, China – Sept 8, 2016 – ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, today announced that its new series of insulated gate bipolar transistors (IGBTs), NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG have won a Top 10 Power Product Award 2016, a highly recognized benchmark in identifying high-quality products for the electronics industry organized by Electronic Products China and 21ic.com.

The 1200 volt (V) IGBTs utilize ON Semiconductor’s proprietary Ultra Field Stop trench technology and meet the exacting demands of modern switching applications such as for uniterruptible power supplies, solar inverters and welding. They are able to achieve industry-leading total switching loss (Ets) characteristics and the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer and optimized co-pack diode.

“We are delighted to win the Top 10 Power Product Award for our new Ultra Field Stop 1200V IGBTs, recognizing our new benchmarks in power efficiency for high power switching systems,” said Asif Jakwani, vice president and general manager for ON Semiconductor’s Power Discrete Division. “ON Semiconductor has put top-dollar investment to make our IGBTs into devices that utilize our proprietary Ultra Field Stop trench technology to perfectly balance VCEsat and Ets, offering reduced switching losses, enhanced power efficiency, robust operation and cost effectiveness.”

To bestow the recognition, the annual Top 10 Power Product Award program recognizes a range of power products through a strict evaluation and recommendation process by an expert judging panel. The nominated products are measured against three principal criteria: design innovation, price-performance and technological advancement.

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