The portfolio of Silicon Carbide (SiC) diodes from ON Semiconductor include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Product Family

650 V SiC Diodes

ON Semiconductor's portfolio of 650 V Silicon Carbide (SiC) Diodes.

1200 V SiC Diodes

ON Semiconductor's portfolio of 1200 V Silicon Carbide (SiC) Diodes.

1700 V SiC Diodes

ON Semiconductor's portfolio of 1700 V Silicon Carbide (SiC) Diodes.

Videos

Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities

Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and motor control.

Utilizing Wide Bandgap in Solar and Renewable Energy Applications

Find out more about utilizing Wide Bandgap technology in your designs for solar panels and other renewable energy applications.

Utilizing Wide Bandgap in HEV/EV Charging Applications

Charging stations for Hybrid Electric Vehicles and Electric Vehicles is one of the major focus markets and drivers of Wide Bandgap, specifically Silicon Carbide.

Utilizing Wide Bandgap in Server and Industrial Power Applications

Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and motor control.

Industrial Motor Control Evaluation System

The NFAQ1060L33T is a fully-integrated inverter power stage consisting of a high-voltage driver, six IGBT’s and a thermistor, suitable for driving permanent magnet synchronous (PMSM) motors...