High performance GaN, IGBT, MOSFET, galvanic isolated, opto isolated, and SiC MOSFET drivers that are ideal for high-power applications. These drivers are designed for high system efficiency, high reliability, short propagation delays and much more. The ideal performance characteristics of these gate drivers enable them to meet the requirements for automotive, industrial, cloud power and computing applications.
Drivers designed for high system efficiency and reliability in high power applications.
Drivers designed to drive low-side switching applications by providing high peak current pulses during the short switching intervals.
High−performance drivers for high power automotive applications that include PTC heaters, traction inverters, high voltage DC-DC and other auxiliary subsystems.
High-speed drivers designed for stringent requirements of driving enhancement mode and gate injection transistor (GIT) GaN HEMT power switches in offline and half-bridge power topologies.
Gate drivers technologies have had certain evolutions during the last decade. With the arrival of on-chip integrated isolation technologies, isolated driver ICs have been developed by main driver IC manufacturers. These digital isolators are replacing the OPTO-coupler technology little by little.
Matching Gate Drivers to GaN Power Transistors