NCP51820GAN1GEVB: NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT
The NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches used in a high−voltage, totem pole configuration. Intended applications include off−line power converter topologies such as: LLC, phase−shifted full−bridge, totem pole PFC, active clamp flyback and forward, dual active−bridge, Phi−2 and high voltage synchronous buck. |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Parts Used | Action | |
|---|---|---|---|---|---|---|
| NCP51820GAN1GEVB | Active |
|
NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT | NCP51820AMNTWG |
Technical Documents
| Type | Document Title | Document ID/Size | Rev |
| Eval Board: BOM | NCP51820GAN1GEVB Bill of Materials (ROHS Compliant) | NCP51820GAN1GEVB_BOM_ROHS - 229 KB | 2 |
| Eval Board: Gerber | NCP51820GAN1GEVB Gerber Layout Files (Zip Format) | NCP51820GAN1GEVB_GERBER - 316 KB | 0 |
| Eval Board: Schematic | NCP51820GAN1GEVB Schematic | NCP51820GAN1GEVB_SCHEMATIC - 22 KB | 0 |
| Eval Board: Test Procedure | NCP51820GAN1GEVB Test Procedure | NCP51820GAN1GEVB_TEST_PROCEDURE - 754 KB | 0 |
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