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/Title (BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor)
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BroadVision, Inc.
2021-11-05T09:58:36-07:00
2021-11-05T09:57:20-07:00
2021-11-05T09:58:36-07:00
application/pdf
BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
onsemi
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Acrobat Distiller 21.0 (Windows)
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