NVHL080N120SC1A: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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Technical Documentation & Design Resources
| White Papers (3) | Package Drawings (1) |
| Simulation Models (3) | Videos (3) |
| Data Sheets (1) |
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Specifications
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NVHL080N120SC1A, Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L | TO-247-3LD | 340CX | 1 | 260 | Tube | 450 | $5.9999
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL080N120SC1A
$5.9999
Pb
A
H
P
Active
N-Channel
Single
1200
31
80
56
80
175
TO-247-3LD
Case Outlines
340CX
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