NTBG080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, D2PAK−7L
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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Technical Documentation & Design Resources
| Simulation Models (3) | Data Sheets (1) |
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Availability & Samples
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Specifications
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Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG080N120SC1
$5.9999
Pb
A
H
P
Active
N-Channel
Single
1200
30
80
56
79
175
D2PAK7 (TO-263-7L HV)
Case Outlines
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