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NTBG080N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, D2PAK−7L

Datasheet: MOSFET - SiC Power, Single N-Channel, D2PAK-7L
Rev. 1 (234kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Low On Resistance
 
  • RDSson = 80mΩ typ
  • High Junction Temperature
 
  • Tj = 175C
  • Ultra Low Gate Charge
   
  • Low Effective Output Capacitance
   
  • This device is RoHS Compliant
   
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
  • UPS
 
  • Solar
  • Charging Station
  • Motor Drive
Technical Documentation & Design Resources
Simulation Models (3) Data Sheets (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTBG080N120SC1 Active
Pb-free
Halide free
NTBG080N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $5.9999
Market Leadtime (weeks) : 17 to 20

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG080N120SC1  
 $5.9999 
Pb
H
 Active   
N-Channel
Single
1200
30
80
56
79
175
D2PAK7 (TO-263-7L HV)
Case Outlines
Previously Viewed Products
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