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NDSH25170A: Silicon Carbide Schottky Diode 1700V, 25A, TO247

Datasheet: Silicon Carbide Schottky Diode, 1700 V, 25 A
Rev. 2 (279kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features   Benefits
     
  • Max Junction Temperature
 
  • Tj = 175°C
  • High Surge Current Capacity
 
  • Avalanche Rated 400 mJ
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
Applications   End Products
  • SMPS
  • Solar Inverter
  • UPS
  • Power Switching Circuits
 
  • AUX Power Supply
  • Rail Traction
Technical Documentation & Design Resources
Simulation Models (3) Videos (4)
Data Sheets (1)  
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NDSH25170A Active
Pb-free
Halide free
NDSH25170A, Silicon Carbide Schottky Diode 1700 V, 25 A TO-247-2LD NA Tube 450 $11.9997
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
NDSH25170A  
 $11.9997 
Pb
H
 Active   
Commercial
Single
1700
35
1.75
220
40
TO-247-2LD
Case Outlines
Previously Viewed Products
Clear List

Featured Video
Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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