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FFSP3065B-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Datasheet: Silicon Carbide Schottky Diode 650 V, 30 A
Rev. 4 (211kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Features   Benefits
     
  • Max Junction Temperature 175C
 
  • Tj = 175°C
  • Avalanche Rated 144 mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 Qualified and PPAP capable
   
Applications   End Products
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (2)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSP3065B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSP3065B-F085 TO-220-2 340BB NA Tube 800 $4.4799
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSP3065B-F085  
 $4.4799 
Pb
A
H
P
 Active   
Automotive
Single
650
30
1.7
120
160
TO-220-2
Case Outlines
340BB   
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Featured Video
Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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