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FFSM0865A: SiC Diode - 650V, 8A, PQFN88

Datasheet: Silicon Carbide Schottky Diode, 650 V, 8 A
Rev. 3 (151kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
Features
 
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSM0865A Active
Pb-free
Halide free
FFSM0865A PQFN-4 483AP 1 260 Tape and Reel 3000 $1.7778
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSM0865A  
 $1.7778 
Pb
H
 Active   
Commercial
Single
650
8
1.75
PQFN-4
Case Outlines
483AP   
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