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FFSH50120A: SiC Diode, 1200V, 50A, TO-247-2

Datasheet: Silicon Carbide Schottky Diode 1200 V, 50 A
Rev. 3 (177kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
 
  • Max Junction Temperature 175 °C
  • Max Junction Temperature 175 °C
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Technical Documentation & Design Resources
Data Sheets (1) Videos (1)
Package Drawings (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSH50120A Active
Pb-free
Halide free
FFSH50120A TO-247-2 340CL NA Tube 450 $16.7462
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSH50120A  
 $16.7462 
Pb
H
 Active   
Commercial
Single
1200
50
1.75
TO-247-2
Case Outlines
340CL   
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