feedback
Rate this webpage
Need
Support?

FFSH40120A: SiC Schottky Diode, 1200 V, 40 A

Datasheet: Silicon Carbide Schottky Diode 1200 V, 40 A
Rev. 2 (196kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
 
  • Max Junction Temperature 175 °C
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSH40120A Active
Pb-free
Halide free
FFSH40120A TO-247-2 340CL NA Tube 450 $13.4042
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSH40120A  
 $13.4042 
Pb
H
 Active   
Commercial
Single
1200
40
1.75
TO-247-2
Case Outlines
340CL   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.