Dual 4-Input NAND Gates

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Overview

These Dual 4 Input NAND Gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.

  • Supply Voltage Range = 3.0 Vdc to 18 Vdc
  • All Outputs Buffered
  • Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
  • Double Diode Protection on All Inputs
  • Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices
  • Pb-Free Packages are Available*

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4

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Type

Channels

VCC Min (V)

VCC Max (V)

tpd Max (ns)

IO Max (mA)

Reference Price

MC14012BDG

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

TUBE

55

N

NAND

2

3

18

130

null

$0.2376

More Details

MC14012BDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

REEL

2500

N

NAND

2

3

18

130

null

$0.1847

More Details

NLV14012BDG

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Obsolete

CAD Model

Pb

A

H

P

SOIC-14

1

260

TUBE

55

N

NAND

2

3

18

null

null

Price N/A

More Details

NLV14012BDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-14

1

260

REEL

2500

Y

NAND

2

3

18

null

null

$0.1847

More Details

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