SRAM Memory | CAT22C10

The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10 ms max. and RECALL operations typically within 1.5 µs. The CAT22C10 features unlimited RAM write operations either through external RAM writes or internal recalls from EEPROM. Internal false store protection circuitry prohibits STORE operations when V_CC is less than 3.0 V.
CAT22C10 is manufactured using onsemi's advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (EEPROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-lead plastic DIP and 16-lead SOIC packages.