feedback
Rate this webpage
Need
Support?

NXH40B120MNQ0: Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

Datasheet: Dual Boost Power Module
Rev. P0 (620kB)
Product Overview
»View Material Composition
» Product Change Notification
The NXH40B120MNQ0 is a power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features   Benefits
     
  • SiC MOSFET Specification: 40 mΩ 1200 V
 
  • Fastest switching speeds for compact inverter solution
  • 50 A / 1200 V Bypass Diodes
 
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • SiC Rectifier Specification: VF = 1.4 V
 
  • SiC Diode for high speed switching
  • Solderable Pins
 
  • Easy mounting
  • Thermistor
   
Applications   End Products
  • Solar Inverter Boost Stage
 
  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH40B120MNQ0SNG Active
Pb-free
Halide free
NXH40B120MNQ0, Nickel Plated DBC Q0 180AJ NA BTRAY 24 $62.6651
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (Ω)
Package Type
NXH40B120MNQ0SNG  
 $62.6651 
Pb
H
 Active   
Two Channel Boost
1200
40
Q0
Case Outlines
180AJ   
Previously Viewed Products
Clear List

Featured Video
Power Integrated Modules for Solar Inverters
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.