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NXH010P120MNF1: SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET

Datasheet: F1-2PACK SiC MOSFET Module
Rev. P1 (1530kB)
Product Overview
»View Material Composition
» Product Change Notification
The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
Features   Benefits
     
  • Recommended gate voltage 18V - 20V
 
  • Improved RDS(ON) at higher voltage
  • Low thermal resistance
 
  • Improved efficiency or higher power density
  • Options for TIM or no TIM
 
  • Flexible solution for high reliability thermal interface
Applications   End Products
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • Electric Vehicle Charger
  • Energy Storage System
  • Solar Inverter 3-phase
  • Uninterruptible Power Supply
Technical Documentation & Design Resources
Application Notes (2) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH010P120MNF1PNG Active
Pb-free
Halide free
NXH010P120MNF1, Press-fit pins, Nickel Plated PIM18 33.8x42.5 (PRESS FIT) 180BW NA BTRAY 28 $87.9978
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (Ω)
Package Type
NXH010P120MNF1PNG  
 $87.9978 
Pb
H
 Active   
2-PACK
1200
10
PIM18 33.8x42.5 (PRESS FIT)
Case Outlines
180BW   
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