feedback
Rate this webpage
Need
Support?

NXH80B120H2Q0: Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode

Datasheet: Dual Boost Power Module
Rev. 3 (240kB)
Product Overview
»View Material Composition
» Product Change Notification
The NXH80B120H2Q0SG is a power integrated module (PIM) containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features   Benefits
     
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
 
  • Fast IGBT with low VCE(SAT) for high efficiency
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
 
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • SiC Rectifier Specification: VF = 1.4 V
 
  • SiC Diode for high speed switching
  • Solderable Pins
 
  • Easy mounting
  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
   
  • Thermistor
   
Applications   End Products
  • Solar Inverter Boost Stage
 
  • Solar Inverter
  • UPS
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH80B120H2Q0SG Active
Pb-free
Halide free
NXH80B120H2Q0, Bare copper DBC Q0 180AJ NA BTRAY 24 $47.9988
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 3,223

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
Rated Current (A)
VCE(sat) Typ (V)
VF Typ (V)
Package Type
NXH80B120H2Q0SG  
 $47.9988 
Pb
H
 Active   
Dual Boost
1200
15
2.1
1.4
Q0
Case Outlines
180AJ   
Previously Viewed Products
Clear List

Featured Video
Solar Home and Battery Storage Demo
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.