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NXH80B120H2Q0: Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode

Datasheet: Dual Boost Power Module
Rev. 3 (240kB)
Product Overview
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» Product Change Notification
The NXH80B120H2Q0SG is a power integrated module (PIM) containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features   Benefits
     
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
 
  • Fast IGBT with low VCE(SAT) for high efficiency
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
 
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • SiC Rectifier Specification: VF = 1.4 V
 
  • SiC Diode for high speed switching
  • Solderable Pins
 
  • Easy mounting
  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
   
  • Thermistor
   
Applications   End Products
  • Solar Inverter Boost Stage
 
  • Solar Inverter
  • UPS
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH80B120H2Q0SG Lifetime
Pb-free
Halide free
NXH80B120H2Q0, Bare copper DBC Q0 180AJ NA BTRAY 24 $47.9988
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 3,223
Case Outlines
180AJ   
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