100V High-Frequency, High Side and Low Side Gate Driver

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Overview

The NCV51511 is high side and low side gate-drive IC designed for high voltage, high-speed, driving MOSFETs operating up to 80 V.The NCV51511 integrates a driver IC and a bootstrap diode. The driverIC features low delay time and matched PWM input propagation delays,which further enhance the performance of the part.The high speed dual gate driver are designed to drive both the high-sideand low-side of N-Channel MOSFETs in a half bridge or synchronousbuck configuration. The floating high-side driver is capable of operatingwith supply voltages of up to 80 V. In the dual gate driver, the high sideand low side each have independent inputs which allow maximumflexibility of input control signals in the application. The PWM inputsignal (high level) can be 3.3 V, 5 V or up to VDD logic input to cover allpossible applications.

  • Half-Bridge and Full-Bridge Converters
  • Synchronous-Buck Converters
  • Two-Switch Forward Converters

  • 48V Automotive Converters

  • Integrated Bootstrap Diode for High Side Gate Drive
  • Bootstrap Supply Voltage Range up to 100V
  • 3 A Source, 6 A Sink Output Current Capability
  • Drives 1nF Load with Typical Rise/Fall Times of 6 ns/4 ns
  • 2 ns Delay Matching (Typical)
  • AEC Qual up to 150°C Tj
  • HS robustness against negative transients

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCV51511PDR2G

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CAD Model

Pb

A

H

P

SOIC-8 EP

2

260

REEL

2500

Y

MOSFET

2

High-Low

Junction Isolation

100

18

6

4

3

6

30

28

10

$1.3483

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