MOSFET / IGBT Drivers, High Voltage, High and Low Side, Dual Input

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Overview

The NCP5304 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.
It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs with cross conduction protection.

  • Half Bridge Power Converters
  • Full Bridge Converters
  • High Voltage Range: Up to 600V
  • dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs
  • Cross Conduction Protection with 100ns Internal Fixed Dead Time
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Pricing ($/Unit)

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NCP5304DR2G

Active

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

MOSFET / IGBT

2

Half-Bridge

Junction Isolation

600

23

85

35

0.25

0.5

100

100

35

$0.7651

More Details

NCP5304PG

Obsolete

Pb

A

H

P

PDIP-8

1

260

TUBE

50

N

MOSFET / IGBT

2

Half-Bridge

Junction Isolation

600

23

85

35

0.25

0.5

100

100

35

Price N/A

More Details

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