High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches

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Overview

The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge ZVS power topologies. The NCP51820 offers short and matched propagation delays as well as a −3.5 V to +650 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.

  • Soft switching ZVS topologies
  • Resonant converter
  • Active clamp flyback converter
  • Bridge totem pole PFC (CrM only)
  • Power supply for OLED TV
  • High power gaming adapter
  • USD PD cellphone and notebook travel adapter
  • Server / Cloud offline power
  • 650 V, high side and low side gate driver
  • Fast propagation delay of 50 ns max
  • Matched propagation delay of 5 ns max
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
  • Separate source and sink output pin
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out

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NCP51820AMNTWG

Active

Pb

A

H

P

QFN-15

1

260

REEL

4000

Y

GaN

2

Half-Bridge

Junction Isolation

650

20

2

1.5

1

2

25

25

5

$0.874

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