NCP51820: High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches

Datasheet: High Speed Half-Bridge Driver for GaN Power Switches
Rev. 5 (795kB)
Product Overview
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Product Change Notification
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
Features   Benefits
     
  • 650 V, high side and low side gate driver
 
  • Design margin for AC/DC design
  • Fast propagation delay of 50 ns max
 
  • Suitable for high frequency operation
  • Matched propagation delay of 5 ns max
 
  • Increased efficiency and allow paralleling
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
 
  • Robust design for high switching frequency application
  • Separate source and sink output pin
 
  • Allow control of rise and fall time for EMI tuning
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
 
  • Optimum driving of GaN power switches and simplify design
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
 
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation
Applications   End Products
  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Totem pole bridgeless PFC
 
  • Power supply for OLED TV
  • High power gaming adapter
  • USD PD cellphone and notebook travel adapter
  • Server / Cloud Data-center Offline power
  • Industrial inverter and motor drive
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP51820GAN1GEVB Active
Pb-free
NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCP51820AMNTWG Active
Pb-free
Halide free
NCP51820, 650 V Half Bridge Gate Driver for GaN Power Switches QFN-15 485FN 1 260 Tape and Reel 4000 $0.8598
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Package Type
NCP51820AMNTWG  
 $0.8598 
Pb
H
 Active   
GaN
2
Half-Bridge
Junction Isolation
650
20
2
1.5
1
2
25
25
5
QFN-15
Case Outlines
485FN   
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