High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches

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Overview

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as −3.5 V to +150 V (typical) common-mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.

  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Non isolated step down converters
  • Data center 48 V to low voltage intermediate bus converter
  • 48 V to PoL converter
  • Industrial power module
  • 150 V, high side and low side gate driver
  • Fast propagation delay of 50 ns max
  • Fast propagation delay of 50 ns max
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
  • Separate source and sink output pin
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out

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NCP51810AMNTWG

Active

Pb

A

H

P

QFN-15

1

260

REEL

4000

F

GaN

2

Half-Bridge

Junction Isolation

150

20

2

1.5

1

2

25

25

10

$0.874

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