625V,3.3/5V input logic compatible 4/4A sink/source current, High Side Gate-DriveIC

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Overview

The FAN73711 is a monolithic high-side gate drive IC that can drive high-speed MOSFETs and IGBTs operating up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse-current driving capability and minimum cross-conduction.
ON Semiconductor’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage.
The high-current and low-output voltage drop feature makes this device suitable for sustain and energy-recovery circuit switch driver in plasma display panel, motor drive inverter, switching power supply, and high-power DC-DC converter applications.

  • PDP TV
  • Other Industrial

  • Floating Channel for Bootstrap Operation to +600 V
  • 4 A / 4 A Sourcing/Sinking Current Driving Capability
  • Common-Mode dv/dt Noise Canceling Circuit
  • 3.3 V and 5 V Input Logic Compatible
  • Output In-phase with Input Signal
  • Under-Voltage Lockout for VBS
  • Built-In Shunt Regulator on VDD and VBS
  • 8-Lead, Small Outline Package (SOP)

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Power Switch

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Topology

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Vin Max (V)

VCC Max (V)

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Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

FAN73711MX

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CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

3000

Y

MOSFET / IGBT

1

High Side

Junction Isolation

625

21

25

15

4

4

150

150

-

$0.4844

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