6-pin DIP High Voltage Phototransistor Output Optocoupler

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Overview

The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

  • Consumer Appliances
  • Industrial Motor

  • High Voltage:
  • MOC8204M, BVCEO= 400 V
  • H11D1M, BVCEO= 300 V
  • H11D3M, BVCEO= 200 V
  • Safety and Regulatory Approvals:
  • UL1577, 4,170 VACRMS for 1 Minute
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channels

CTR (Min) (%)

CTR (Max) (%)

CTR tested @ IF (mA)

VCE(sat) (Max) (V)

BVCEO (Min) (V)

BVCBO (Min) (V)

BVECO (Min) (V)

ton (Max) (µs)

toff (Max) (µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

Reference Price

H11D3M

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CAD Model

Pb

A

H

P

PDIP-6

NA

0

BLKBG

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3187

More Details

H11D3SM

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Active

CAD Model

Pb

A

H

P

PDIP-6

1

260

BLKBG

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3187

More Details

H11D3SR2M

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Active

CAD Model

Pb

A

H

P

PDIP-6

1

260

REEL

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3763

More Details

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