6-Pin DIP Phototransistor Output Optocoupler

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Overview

The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications

  • Consumer Appliances
  • Industrial Motor

  • High efficiency low degradation liquid epitaxial IRED
  • Logic level compatible, input and output currents, with CMOS and LS/TTL
  • High DC current transfer ratio at low input currents (as low as 200µA)
  • Underwriters Laboratory (UL) recognized File#E90700, Volume 2
  • VDE approval available as a test option
  • – Add option V (e.g., H11AG1VM)

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channels

CTR (Min) (%)

CTR (Max) (%)

CTR tested @ IF (mA)

VCE(sat) (Max) (V)

BVCEO (Min) (V)

BVCBO (Min) (V)

BVECO (Min) (V)

ton (Max) (µs)

toff (Max) (µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

Reference Price

H11AG1M

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CAD Model

Pb

A

H

P

PDIP-6

NA

0

BLKBG

1000

N

1

300

-

1

0.4

30

70

7

5

5

4200

-40

100

$0.5525

More Details

H11AG1SM

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Active

CAD Model

Pb

A

H

P

PDIP-6

1

260

BLKBG

1000

N

1

300

-

1

0.4

30

70

7

5

5

4200

-40

100

$0.6501

More Details

H11AG1SR2M

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Active

CAD Model

Pb

A

H

P

PDIP-6

1

260

BLKBG

1000

N

1

300

-

1

0.4

30

70

7

5

5

4200

-40

100

$0.5001

More Details

H11AG1TVM

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Last Shipments

CAD Model

Pb

A

H

P

PDIP-6

NA

0

BLKBG

1000

N

1

300

-

1

0.4

30

70

7

5

5

4200

-40

100

Price N/A

More Details

H11AG1VM

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Active

CAD Model

Pb

A

H

P

PDIP-6

NA

0

BLKBG

1000

N

1

300

-

1

0.4

30

70

7

5

5

4200

-40

100

$0.4101

More Details

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