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NTLJD3115P: Dual P-Channel Power MOSFET -20V -4.1A 100mΩ

Datasheet: MOSFET — Power, Dual, P-Channel, WDFN 2X2 mm -20 V, -4.1 A
Rev. 7 (138kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package
Features
 
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88
  • Lowest RDS(on) Solution in 2x2 mm Package
  • 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • Bidirectional Current Flow with Common Source Configuration
Applications
  • Optimized for Battery and Load Management Applications in Portable Equipment
  • Li-Ion Battery Charging and Protection Circuits
  • High Side Load Switch
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTLJD3115PT1G Active
Pb-free
Halide free
NTLJD3115P WDFN-6 506AN 1 260 Tape and Reel 3000 $0.1685
NTLJD3115PTAG Obsolete 
Pb-free
Halide free
NTLJD3115P WDFN-6 506AN 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : 17 to 20
PandS   (2020-09-14) : >1K
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTLJD3115PT1G  
 $0.1685 
Pb
H
 Active   
P-Channel
Dual
-20
8
1
3.3
1.5
Q1=Q2=135
Q1=Q2=100
-
6.5
5.5
531
WDFN-6
Case Outlines
506AN   
Packages
NTLJD3115P: Dual P-Channel Power MOSFET -20V -4.1A 100mΩ
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