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NTHD4P02: Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ

Datasheet: MOSFET — Power, Single, P-Channel, Schottky Diode, ChipFET, Schottky Barrier -20 V, -3.0 A, 3.0 A
Rev. 7 (140kB)
Product Overview
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» Product Change Notification
Power MOSFET -20V -3A 155mΩ Dual P-Channel ChipFET™
3.0 A Schottky Barrier Diode
Features
 
  • Leadless SMD package featuring a MOSFET and Schottky Diode
  • 40% smaller than TSOP-6 package with similar thermal characteristics
  • Independent pinout to each device to ease circuit design
  • Ultra low VF Schottky
Applications
  • Li-Ion Battery Charging
  • High side DC-DC Conversion circuits
  • High side drive for small brushless DC motors
  • Power management in portable, battery powered products
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHD4P02FT1G Active
Pb-free
Halide free
NTHD4P02 ChipFET-8 1206A-03 1 260 Tape and Reel 3000 $0.1821
NTHD4P02FT1 Obsolete
NTHD4P02 ChipFET-8 1206A-03 1 235 Tape and Reel 3000  
Market Leadtime (weeks) : 2 to 4
PandS   (2020-09-14 00:00) : >1K
ON Semiconductor   (2020-09-02 00:00) : 27,000
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHD4P02FT1G  
 $0.1821 
Pb
H
 Active   
P-Channel
Single
-20
12
-1.2
-3
1.1
200
130
-
7.4
3
185
ChipFET-8
Case Outlines
1206A-03   
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