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NDDP010N25AZ: Single N-Channel Power MOSFET 250V, 10A, 420mΩ

Datasheet: Power MOSFET, 250V, 10A, 420mOhm, N-Channel
Rev. 2 (383kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
Features   Benefits
     
  • High Speed Switching
 
  • Reduces dynamic power losses
  • ESD Diode-Protected Gate
 
  • ESD resistance
  • Low Gate Charge
 
  • Ease of drive, faster turn-on
  • 100% Avalanche Tested
 
  • Voltage overstress safeguard
  • Pb-Free, Halogen Free and RoHS Compliance
 
  • Environment friendliness
Applications   End Products
  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
 
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
Technical Documentation & Design Resources
Simulation Models (1) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NDDP010N25AZT4H Active
Pb-free
Halide free
NDDP010N25AZ DPAK-3 / TO-252-3 369AH 1 260 Tape and Reel 700 $0.4796
Market Leadtime (weeks) : 4 to 8
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NDDP010N25AZT4H  
 $0.4796 
Pb
H
 Active   
N-Channel
Single
250
30
4.5
10
52
-
-
420
-
16
980
DPAK-3 / TO-252-3
Case Outlines
369AH   
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