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FQT13N06L: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

Datasheet: FQT13N06L-D.pdf
Rev. A (908kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
 
  • 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested
Applications
  • LED TV
  • Consumer Appliances
  • Other Industrial
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SECO-RANGEFINDER-GEVK Active
Pb-free
SiPM Direct Time of Flight (dToF) LiDAR
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQT13N06LTF Active
Pb-free
FQT13N06L SOT-223-4 / TO-261-4 318H-01 1 260 Tape and Reel 4000 $0.1775
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQT13N06LTF  
 $0.1775 
Pb
 Active   
N-Channel
Single
60
±20
2.5
2.8
2.1
-
140
110
-
4.8
270
SOT-223-4 / TO-261-4
Case Outlines
318H-01   
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