FQT13N06L: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223
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This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
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Technical Documentation & Design Resources
| Software (2) | Videos (2) |
| Application Notes (13) | Conformance Reports (1) |
| Simulation Models (1) | Evaluation Board Documents (2) |
| Data Sheets (1) | UsersManual (1) |
| Package Drawings (1) |
Evaluation/Development Tool Information
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| SECO-RANGEFINDER-GEVK | Active |
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SiPM Direct Time of Flight (dToF) LiDAR |
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Availability & Samples
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Specifications
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Case Outline |
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| FQT13N06LTF | Active |
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FQT13N06L | SOT-223-4 / TO-261-4 | 318H-01 | 1 | 260 | Tape and Reel | 4000 | $0.2196
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQT13N06LTF
$0.2196
Pb
A
H
P
Active
N-Channel
Single
60
±20
2.5
2.8
2.1
-
140
110
-
4.8
270
SOT-223-4 / TO-261-4
Case Outlines
318H-01
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