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FDZ191P: P-Channel 1.5V Specified PowerTrench® WL-CSP MOSFET -20V, -1A, 85mΩ

Datasheet: FDZ191P-D.pdf
Rev. A (433kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Designed on an advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). .
Features
 
  • Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
  • Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
  • Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
  • Occupies only 1.5 mm² of PCB area Less than 50% of the area of 2 x 2 BGA
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDZ191P Active
Pb-free
Halide free
FDZ191P WLCSP-6 567PW 1 260 Tape and Reel 5000 $0.2451
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDZ191P  
 $0.2451 
Pb
H
 Active   
P-Channel
Single
-20
8
-1.5
-1
1.9
123
85
-
18
9
800
WLCSP-6
Case Outlines
567PW   
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