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FDS8896: N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ

Datasheet: N-Channel PowerTrench MOSFET 30V, 15A, 6.0m-Ohm
Rev. 2 (586kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
 
  • RDS(ON) = 6.0 mΩ @ VGS = 10V @ ID = 15A
  • RDS(ON) = 7.3 mΩ @ VGS = 4.5V @ ID = 14A
  • High performance trench technology for extremely lowrDS(ON)
  • Low gate charge
  • High power and current handling capability
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDS8896 Active
Pb-free
Halide free
FDS8896 SOIC-8 751EB 1 260 Tape and Reel 2500 $0.3772
PCF8896W Active
Pb-free
Halide free
FDS8896 NA WJAR 1 $0.9372
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : 17 to 20

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDS8896  
 $0.3772 
Pb
H
 Active   
N-Channel
Single
30
20
2.5
15
2.5
-
7.3
6
-
28
2525
SOIC-8
PCF8896W  
 $0.9372 
Pb
H
 Active   
N-Channel
Single
30
20
2.5
15
2.5
-
7.3
6
-
28
2525
Case Outlines
751EB   
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