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FDN342P: P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -2A, 80mΩ

Datasheet: P-Channel 2.5V Specified PowerTrench MOSFET
Rev. 2 (266kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).
Features
 
  • -2 A, -20 V
  • RDS(ON) = 0.08 Ω @ VGS = -4.5 V
  • RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
  • Rugged gate rating (±12V)
  • High performance trench technology for extremely low RDS(ON).
  • Enhanced power SuperSOT™-3 (SOT-23)
Applications
  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Battery Protection
  • Power Management
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN342P Active
Pb-free
Halide free
FDN342P SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.19
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN342P  
 $0.19 
Pb
H
 Active   
P-Channel
Single
-20
12
-1.5
-2
0.5
130
80
-
4.2
6.3
635
SOT-23-3
Case Outlines
527AG   
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