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FDMS86163P: P-Channel PowerTrench® MOSFET -100V, -50A, 22mΩ

Datasheet: FDMS86163P P-Channel PowerTrench® MOSFET
Rev. A (540kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This P-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
  • Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
  • Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant
Applications
  • Mobile Comm Infrastructure
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS86163P Active
Pb-free
Halide free
FDMS86163P PQFN-8 483AE 1 260 Tape and Reel 3000 $1.0066
Market Leadtime (weeks) : 13 to 16

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS86163P  
 $1.0066 
Pb
H
 Active   
P-Channel
Single
-100
±25
-4
-50
104
-
-
22
-
26
3070
PQFN-8
Case Outlines
483AE   
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