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FDMS86150: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

Datasheet: FDMS86150-D.pdf
Rev. A (355kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MOSFET is produced using an advanced PowerTrench® process thant hasbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
  • Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
Applications
  • DC-DC Merchant Power Supply
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS86150 Active
Pb-free
Halide free
FDMS86150 PQFN-8 483AG 1 260 Tape and Reel 3000 $1.36
Market Leadtime (weeks) : 2 to 4

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS86150  
 $1.36 
Pb
H
 Active   
N-Channel
Single
100
±20
4
80
156
-
-
4.85
-
25
3055
PQFN-8
Case Outlines
483AG   
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