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FDMS3660S: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Datasheet: PowerTrench Power Stage Asymmetric Dual N?Channel MOSFET
Rev. 3 (478kB)
Product Overview
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» Product Change Notification
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Features
 
  • Q1: N-Channel
    Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
    Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
  • Q2: N-Channel
    Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
    Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant
Applications
  • Notebook PC
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS3660S Active
Pb-free
Halide free
FDMS3660S PQFN-8 483AJ 1 260 Tape and Reel 3000 $0.614
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS3660S  
 $0.614 
Pb
H
 Active   
N-Channel
Dual
30
12
Q1: 2.7, Q2; 2.2
Q1: 13.0, Q2: 30.0
Q1:2.2, Q2: 2.5
-
Q1: 11.0, Q2: 2.2
Q1: 8, Q2: 1.8
17
29
4130
PQFN-8
Case Outlines
483AJ   
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