FDMS3660S: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
|
|
»View Reliability Data
»View Material Composition » Product Change Notification |
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
| Features | |
|---|---|
|
|
|
|
|
|
|
|
|
| Applications |
|---|
|
Technical Documentation & Design Resources
| Application Notes (12) | Data Sheets (1) |
| Simulation Models (1) | Package Drawings (1) |
|
Availability & Samples
|
Specifications
|
|
|
|
|
|
|
|
|
|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Case Outline |
|
|
|
|
|||||||||||||
| FDMS3660S | Active |
|
FDMS3660S | PQFN-8 | 483AJ | 1 | 260 | Tape and Reel | 3000 | $0.614
|
||||||||
| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS3660S
$0.614
Pb
A
H
P
Active
N-Channel
Dual
30
12
Q1: 2.7, Q2; 2.2
Q1: 13.0, Q2: 30.0
Q1:2.2, Q2: 2.5
-
Q1: 11.0, Q2: 2.2
Q1: 8, Q2: 1.8
17
29
4130
PQFN-8
Case Outlines
483AJ
| Support |