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FDG330P: P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ

Datasheet: FDG330P-D.pdf
Rev. A (266kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This P-Channel 1.8V specified MOSFET uses ON Semiconductor’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
 
  • -2A, -12V
  • RDS(ON) = 110mΩ @ VGS = -4.5V
  • RDS(ON) = 150mΩ @ VGS = -2.5V
  • RDS(ON) = 215mΩ @ VGS = -1.8V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • Compact industry standard SC70-6 surface mount package
Applications
  • This product is general usage and suitable for many different applications.
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG330P Obsolete
Pb-free
Halide free
FDG330P SC-88-6 / SC-70-6 / SOT-363-6 419AD 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Case Outlines
419AD   
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