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FDG316P: P-Channel Logic Level PowerTrench® MOSFET -30 V, -1.6 A, 190 mΩ

Datasheet: MOSFET – P-Channel, Logic Level, POWERTRENCH®
Rev. 4 (203kB)
Product Overview
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This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
 
  • -1.6 A, -30 A V
  • RDS(on) = 0.19 Ω @ VGS = -10 V
  • RDS(on) = 0.30 Ω @ VGS = -4.5 V.
  • Low gate charge (3.5nC typical).
  • High performance trench technology for extremely lowRDS(ON).
  • Compact industry standard SC70-6 surface mountpackage.
Applications
  • This product is general usage and suitable for many different applications.
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG316P Last Shipments
Pb-free
Halide free
FDG316P SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 36,000
Case Outlines
419B-02   
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