FDC3535: P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ
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This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
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Technical Documentation & Design Resources
| Software (7) | Package Drawings (1) |
| Application Notes (12) | Videos (2) |
| Simulation Models (1) | Evaluation Board Documents (5) |
| Data Sheets (1) |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Action | |
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| LIGHTING-1-GEVK | Active |
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Connected Lighting Platform for LED Control |
| FutureElectronics (2020-08-19) | : | 4 |
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Availability & Samples
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Specifications
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Interactive Block Diagram
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Case Outline |
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| FDC3535 | Active |
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FDC3535 | TSOT-23-6 | 419BL | 1 | 260 | Tape and Reel | 3000 | $0.2467
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC3535
$0.2467
Pb
A
H
P
Active
P-Channel
Single
-80
±20
-3
-2.1
1.6
-
233
183
-
6.8
659
TSOT-23-6
Case Outlines
419BL
Application
Diagram - Block
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