FDC3535: P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ
|
|
»View Reliability Data
»View Material Composition » Product Change Notification |
This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
| Features | |
|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Applications |
|---|
|
Technical Documentation & Design Resources
| Software (7) | Package Drawings (1) |
| Application Notes (12) | Videos (2) |
| Simulation Models (1) | Evaluation Board Documents (5) |
| Data Sheets (1) |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Action | |
|---|---|---|---|---|---|
| LIGHTING-1-GEVK | Active |
|
Connected Lighting Platform for LED Control |
| FutureElectronics (2020-08-19) | : | 4 |
|
Availability & Samples
|
Specifications
|
|
|
|
|
|
|
|
|
|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Case Outline |
|
|
|
|
|||||||||||||
| FDC3535 | Active |
|
FDC3535 | TSOT-23-6 | 419BL | 1 | 260 | Tape and Reel | 3000 | $0.2467
|
||||||||
| Market Leadtime (weeks) | : | 8 to 12 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC3535
$0.2467
Pb
A
H
P
Active
P-Channel
Single
-80
±20
-3
-2.1
1.6
-
233
183
-
6.8
659
TSOT-23-6
Case Outlines
419BL
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.