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NGTB75N65FL2: IGBT, 650V 75A FS2 Solar/UPS

Datasheet: IGBT
Rev. 5 (239kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
 
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
Applications
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB75N65FL2WG Active
Pb-free
Halide free
NGTB75N65FL2 TO-247-3 340AL NA Tube 30 $4.1332
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
NGTB75N65FL2WG  
 $4.1332 
Pb
H
 Active   
650
75
1.7
2.2
1
1.5
80
8
310
5
-
595
Yes
TO-247-3
Case Outlines
340AL   
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