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NGTB40N120FL2WA: IGBT, 1200 VField Stop II, 40 A

Datasheet: IGBT - Field Stop II / 4 Lead
Rev. 0 (152kB)
Product Overview
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features   Benefits
     
  • TO-247-4L
 
  • Minimal Eon Losses
  • Extremely Efficient Trench with Field Stop Technology
   
  • TJmax = 175°C
   
  • Improved Gate Control Lowers Switching Losses
   
  • Separate Emitter Drive Pin
   
  • Optimized for High Speed Switching
   
  • These are Pb-Free Devices
   
Applications   End Products
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Neutral Point Clamp Topology
 
  • Industrial
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB40N120FL2WAG Lifetime
Pb-free
Halide free
NGTB40N120FL2WA TO-247-4 340AR NA Tube 30 $2.6399
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 180
Case Outlines
340AR   
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