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NGTB30N120L2: IGBT, 1200V 30A FS2 Low VCEsat

Datasheet: IGBT - Field Stop II
Rev. 0 (100kB)
Product Overview
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage
Features
 
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability
Applications
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
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Case Outline
Type
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Qty.
NGTB30N120L2WG Last Shipments
Pb-free
Halide free
NGTB30N120L2 TO-247-3 340AL NA Tube 30  
Market Leadtime (weeks) : Contact Factory
Case Outlines
340AL   
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