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FGH75T65SQDTL4: IGBT, 650 V, 75 A Field Stop Trench

Datasheet: IGBT - Field Stop, Trench 650 V, 75 A
Rev. 2 (527kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential
Features
 
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGH75T65SQDTL4 Active
Pb-free
Halide free
FGH75T65SQDTL4 TO-247-4 340CJ NA Tube 450 $3.3021
Market Leadtime (weeks) : 13 to 16

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGH75T65SQDTL4  
 $3.3021 
Pb
H
 Active   
650
75
1.6
1.8
0.266
0.307
76
-
128
-
-
375
Yes
TO-247-4
Case Outlines
340CJ   
Previously Viewed Products
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