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FGH40T120SQDNL4: IGBT, Ultra Field Stop

Datasheet: IGBT - Ultra Field Stop
Rev. 2 (300kB)
Product Overview
»View Material Composition
» Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
 
  • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices
Applications
  • Solar inverter UPS Welding
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGH40T120SQDNL4 Active
Pb-free
Halide free
FGH40T120SQDNL4 TO-247-4 340CJ NA Tube 450 $3.9466
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGH40T120SQDNL4  
 $3.9466 
Pb
H
 Active   
1200
40
1.78
3.4
1.1
2.7
166
9
221
0
227
Yes
TO-247-4
Case Outlines
340CJ   
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