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FGH30N60LSD: IGBT, 600V, 30A, PT

Datasheet: IGBT - PT 600 V, 30 A
Rev. 3 (275kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Using ON Semiconductor's planar technology, the FGH30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.
Features
 
  • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
  • High Input Impedance
  • Low Conduction Loss
Applications
  • Energy Generation & Distribution
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGH30N60LSDTU Active
Pb-free
Halide free
FGH30N60LSD TO-247-3 340CK NA Tube 450 $5.3599
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGH30N60LSDTU  
 $5.3599 
Pb
H
 Active   
600
30
1.1
Yes
TO-247-3
Case Outlines
340CK   
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