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FGAF20N60SMD: IGBT, 600V, 20A, Field Stop

Datasheet: FGAF20N60SMD-D.pdf
Rev. A (1058kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2 nd generation IGBTs offer the optimum performance for consumer appliances, motion control and home appliances where low conduction and switching losses are essential.
Features
 
  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.7V(Typ.) @ IC = 20A
  • High input impedance
  • Fast switching: EOFF =7uJ/A
  • Tightened parameter distribution
  • RoHS compliant
Applications
  • Consumer Appliances
  • Motion Control - Home Appliance
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGAF20N60SMD Active
Pb-free
FGAF20N60SMD TO-3PF-3L 340AH NA Tube 360 $1.9
Market Leadtime (weeks) : 4 to 8

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGAF20N60SMD  
 $1.9 
Pb
 Active   
600
20
1.7
2.3
0.141
0.452
88.2
-
64
-
-
75
Yes
TO-3PF-3L
Case Outlines
340AH   
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