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MJF32C: PNP Bipolar Power Transistor

Datasheet: Complementary Silicon Plastic Power Transistors for Isolated Package Applications
Rev. 5 (122.0kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.
Features
 
  • Collector–Emitter Saturation Voltage
    –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector–Emitter Sustaining Voltage
    – VCEO(sus) = 100 Vdc (Min)
  • High Current Gain – Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • UL Recognized, File #E69369, to 3500 VRMS Isolation
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
MJF32CG Active
Pb-free
MJF32C TO-220-3 FullPak 221D-03 NA Tube 50 $0.4141
MJF32C Obsolete
MJF32C TO-220-3 FullPak 221D-03 NA Tube 50  
Market Leadtime (weeks) : 2 to 4
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
MJF32CG  
 $0.4141 
Pb
 Active   
PNP
General Purpose
1.2
3
100
100
5
-
1.8
10
50
3
30
TO-220-3 FullPak
Case Outlines
221D-03   
Packages
MJF32C: PNP Bipolar Power Transistor
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