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NCP5183: High Voltage 4.3 A High and Low Side Driver

Datasheet: High Voltage High Current High and Low Side Driver
Rev. 2 (487kB)
Product Overview
»View Material Composition
» Product Change Notification
The NCP5183 is a High Voltage High Current Power MOSFET Driver providing two outputs for direct drive of 2 N−channel power MOSFETs arranged in a half−bridge (or any other high−side + low−side) configuration. It uses the bootstrap technique to insure a proper drive of the High−side power switch. The driver works with 2 independent inputs to accommodate any topology (including half−bridge, asymmetrical half−bridge, active clamp and full−bridge…).
Features   Benefits
     
  • Output Source / Sink Current Capability 4.3 A / 4.3 A
 
  • Can drive big MOSFET, IGBT's
  • Extended Allowable Negative Bridge Pin Voltage Swing to – 10 V
 
  • Rugged design
  • Voltage Range up to 600 V with dV/dt Immunity ±50 V/ns
   
  • Gate Drive Supply Range from 9 V to 18 V
   
  • Automotive Qualified to AEC Q100
   
Applications   End Products
  • High Voltage Synchronous-Buck Converters
  • Half-Bridge and Full-Bridge Converters
  • Electric Power Steering & Motor Control
 
  • Power Supplies for Telecom and Datacom
  • Push-Pull Converters
  • Automotive power conversion
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP5183SYNCBUCKGEVB Active
Pb-free
Variable DC Input, Open Loop Synchronous Buck Evaluation Board
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCP5183DR2G Active
Pb-free
Halide free
NCP5183 SOIC-8 751-07 1 260 Tape and Reel 2500 $0.9333
NCV5183DR2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NCP5183, AEC Q100 version SOIC-8 751-07 1 260 Tape and Reel 2500 $1.9653
Market Leadtime (weeks) : 17 to 20
ON Semiconductor   (2020-09-02 00:00) : 202,500
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP5183DR2G  
 $0.9333 
Pb
H
 Active   
MOSFET / IGBT
2
High-Low
Junction Isolation
600
18
4300 / 4300
12
12
200
SOIC-8
NCV5183DR2G  
 $1.9653 
Pb
A
H
P
 Active   
MOSFET / IGBT
2
High-Low
Junction Isolation
600
18
4300 / 4300
12
12
200
SOIC-8
Case Outlines
751-07   
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