NCP5111: Power MOSFET / IGBT Driver, Single Input, Half-Bridge
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The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.
It uses the bootstrap technique to insure a proper drive of the High-side power switch.
It uses the bootstrap technique to insure a proper drive of the High-side power switch.
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Technical Documentation & Design Resources
| Application Notes (1) | Data Sheets (1) |
| Simulation Models (1) | Package Drawings (2) |
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Availability & Samples
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Specifications
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Case Outlines
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Application Diagram
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Case Outline |
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| NCP5111DR2G | Active |
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NCP5111 | SOIC-8 | 751-07 | 1 | 260 | Tape and Reel | 2500 | $0.4267 | ||||||||
| NCP5111PG | Obsolete |
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NCP5111 | PDIP-8 | 626-05 | 1 | 260 | Tube | 50 | |||||||||
| Market Leadtime (weeks) | : | Contact Factory |
| Avnet (2020-08-19 00:00) | : | >1K |
| PandS (2020-09-14 00:00) | : | <100 |
| Market Leadtime (weeks) | : | Contact Factory |
| PandS (2020-09-14 00:00) | : | >1K |
Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP5111DR2G
$0.4267
Pb
A
H
P
Active
MOSFET / IGBT
2
High-Low
Junction Isolation
600
23
250 / 500
85
35
170
SOIC-8
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