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FFP08S60SN: 8A, 600V, STEALTH™ II Diode

Datasheet: FFP08S60SN-D.pdf
Rev. A (452kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Features
 
  • Stealth recovery Trr = 25ns (@IF= 8A)
  • Max Forward Voltage, VF = 3.4V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Improved dv/dt capability
  • RoHS compliant
Applications
  • LCD TV
Technical Documentation & Design Resources
Application Notes (1) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFP08S60SNTU Lifetime
Pb-free
Halide free
FFP08S60SN TO-220-2 340BA NA Tube 1000 $0.4423
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 3,000
Case Outlines
340BA   
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